Resonant enhancement (?) of the recombination probability at the nitrogen-trap, Γ-band edge crossover in GaAs1−xPx: N(EN = EΓ, x ≡ xN)
- 1 February 1975
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 16 (3), 319-322
- https://doi.org/10.1016/0038-1098(75)90177-5
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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