Recombination transitions in Zn–N-doped GaAs1−xPx in the direct and indirect composition regions

Abstract

The behavior of the Zn acceptor in conjunction with the N isoelectronic trap in GaAs_1−xP_x is studied. The photoluminescence spectra of GaAs_1−xP_x : N : Zn, doped p type by dilute Zn diffusion, are shifted to lower energy by an amount E_Zn≃30 meV (x < x_c≃0.46, 77°K) for recombination transitions involving the Γ band edge, the A line, or NN pairs. For transitions involving the A line or NN pairs and crystal composition beyond the direct‐indirect transition (x > x_c), the spectral shift due to the Zn acceptor weakens with increasing x, which is in accord with the relative weakening of k = 0 recombination components as E_Γ increases relative to E_χ. Photopumped laser operation of GaAs_1−xP_x : N : Zn (x < 0.46) platelets is demonstrated on Zn–N transitions. No effect is observed attributable to Zn–N complexes.