Organic n-type field-effect transistor
- 31 October 1994
- journal article
- Published by Elsevier in Synthetic Metals
- Vol. 66 (3), 257-261
- https://doi.org/10.1016/0379-6779(94)90075-2
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Structural basis for high carrier mobility in conjugated oligomersSynthetic Metals, 1991
- Field-effect transistors using alkyl substituted oligothiophenesApplied Physics Letters, 1991
- All-organic thin-film transistors made of alpha-sexithienyl semiconducting and various polymeric insulating layersApplied Physics Letters, 1990
- Molecular field-effect transistors using conducting polymer Langmuir–Blodgett filmsApplied Physics Letters, 1990
- Thin-film transistors based on nickel phthalocyanineJournal of Applied Physics, 1989
- Metal-polymer Schottky barriers on processible polymersSynthetic Metals, 1989
- New semiconductor device physics in polymer diodes and transistorsNature, 1988
- Field-effect mobility of poly(3-hexylthiophene)Applied Physics Letters, 1988
- Polythiophene field-effect transistor: Its characteristics and operation mechanismSynthetic Metals, 1988
- Schottky barrier type diode with an electrochemically prepared copolymer having pyrrole and N-methylpyrrole unitsJournal of Applied Physics, 1983