Thin-film transistors based on nickel phthalocyanine
- 1 November 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (9), 4554-4556
- https://doi.org/10.1063/1.343929
Abstract
Thin-film transistors have been made using nickel phthalocyanine (PcNi) as active component. The characteristics of these transistors are studied with positive and negative gate-source and drain-source polarizations. The channel conductivity was p type. Very different thicknesses of PcNi layer are used, showing that in the two polarizations the effects are interfacial.Keywords
This publication has 9 references indexed in Scilit:
- Field-effect mobility of poly(3-hexylthiophene)Applied Physics Letters, 1988
- Polythiophene field-effect transistor: Its characteristics and operation mechanismSynthetic Metals, 1988
- Field-effect transistor with diphthalocyanine thin filmElectronics Letters, 1988
- A well-behaved field effect transistor based on an intrinsic molecular semiconductorChemical Physics Letters, 1988
- Characteristics of a Field-Effect Transistor Fabricated with Electropolymerized Thin FilmJapanese Journal of Applied Physics, 1988
- The first field effect transistor based on an intrinsic molecular semiconductorChemical Physics Letters, 1987
- Field-effect transistor with polythiophene thin filmSynthetic Metals, 1987
- Spectroscopic properties and conductivity of thin films of partially reduced metallo-phthalocyaninesThe Journal of Chemical Physics, 1985
- Material Properties Controlling the Performance of Amorphous Silicon Thin Film TransistorsMRS Proceedings, 1984