Probing localization and mobility of an excess electron ina-Si by quantum molecular dynamics
- 15 April 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (15), 8363-8368
- https://doi.org/10.1103/physrevb.45.8363
Abstract
The behavior of an excess electron in a-Si is studied over a wide temperature range using the quantum-molecular-dynamics approach. The electron is found to be localized in a nearly spherical void of radius ∼3 Å, and is surrounded by a ring of eight Si atoms. The simulation results for the electron mobility are in good agreement with the time-of-flight measurements.Keywords
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