Electron-Beam-Induced Current Observation of Misfit Dislocations at Si1-XGeX/Si Interfaces
- 1 December 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (12A), L1944-1946
- https://doi.org/10.1143/jjap.26.l1944
Abstract
The electron-beam-induced current (EBIC) method has been applied to observing the misfit dislocations at Si1-X Ge X /Si interfaces in order to determine directly the dependence of critical layer thickness h c on mole fraction X. The EBIC images show square-grid patterns that agree with a chemical etched pattern. The typical dislocation image width obtained by EBIC is about 0.5 µm, which approximately agrees with the resolution introduced from the lateral-dose function. It has been found that the dependence of h c on X judged from whether or not the misfit dislocations generate cannot be explained by the theory presented by People and Bean.8)Keywords
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