A New AlGaAs/GaAs Heterojunction FET with Insulated Gate Structure (MISSFET)
- 1 February 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (2A), L122
- https://doi.org/10.1143/jjap.21.l122
Abstract
We have proposed and successfully fabricated a new type of field-effect transistor (FET) with an M-I-S-S structure, which consists of a metal gate, an Al2O3 insulator and a semiconductor-semiconductor (N-AlGaAs/GaAs) heterojunction, grown by molecular beam epitaxy. This device exhibited the following advantages. High effective mobility of electrons (µeff being 27,000 cm2/V·s at 77 K) and, the capability of sustaining a high gate voltage of up to 2 V in the forward direction. These features permit the use of MISSFETs in a variety of logic circuits with a larger logic swing and higher speed than those of MESFETs.Keywords
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