High-temperature electrical characteristics of GaAs MESFETs (25-400 degrees C)
- 1 July 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (7), 1551-1557
- https://doi.org/10.1109/16.141218
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Numerical analysis of the frequency-dependent output conductance of GaAs MESFET'sIEEE Transactions on Electron Devices, 1991
- Inclusion of impact ionization in the backgating of GaAs FETsIEEE Electron Device Letters, 1990
- A new GaAs technology for stable FETs at 300 degrees CIEEE Electron Device Letters, 1989
- Temperature dependence of GaAs metal–semiconductor field effect transistor threshold voltageJournal of Vacuum Science & Technology B, 1988
- GaAs Devices and CircuitsPublished by Springer Nature ,1987
- Design Consideration in High Temperature Analog CMOS Integrated CircuitsIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1986
- Temperature dependence of backgating effect in GaAs integrated circuitsIEEE Electron Device Letters, 1985
- Temperature effect on low threshold voltage ion-implanted GaAs MESFETsElectronics Letters, 1981
- A device model for an ion-implanted MESFETIEEE Transactions on Electron Devices, 1979