Molecular beam epitaxy and field emission deposition for metal film growth on III–V compound semiconductors—A comparative study
- 1 March 1979
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 58 (1), 189-196
- https://doi.org/10.1016/0040-6090(79)90235-9
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- A study of the structure and properties of epitaxial silver deposited by atomic beam techniques on (001) InPThin Solid Films, 1979
- Field emission deposition sourcesThin Solid Films, 1979
- A high temperature high purity source for metal beam epitaxyThin Solid Films, 1978
- On the growth of Au on clean and contaminated GaAs(001) surfacesJournal of Crystal Growth, 1977
- Ionized-cluster beam deposition and epitaxy as fabrication techniques for electron devicesThin Solid Films, 1977
- Epitaxial growth of Ag films on InP (001) by atomic beam epitaxy in ultra-high vacuumJournal of Physics D: Applied Physics, 1977
- An X-ray cylindrical texture camera for the examination of thin filmsJournal of Applied Crystallography, 1975
- Molecular beam epitaxy of alternating metal-semiconductor filmsApplied Physics Letters, 1973