Ionized-cluster beam deposition and epitaxy as fabrication techniques for electron devices
- 1 September 1977
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 45 (3), 569-576
- https://doi.org/10.1016/0040-6090(77)90248-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Contact and interconnect formation on compound semiconductor devices by ionized-cluster beam depositionThin Solid Films, 1976
- An evaluation of metal and semiconductor films formed by ionized-cluster beam depositionThin Solid Films, 1976
- Ionized-cluster beam depositionJournal of Vacuum Science and Technology, 1975
- Mn-implanted ZnS thin-film electroluminescent deviceIEEE Transactions on Electron Devices, 1973
- Direct current electroluminescence in ZnSJournal of Physics D: Applied Physics, 1970