32.3: Metal-Induced Unilaterally Crystallized Polycrystalline Silicon Thin-Film Transistor Technology for Active-Matrix Organic Light-Emitting Diode Displays with Reduced Susceptibility to Cross-Talk
Open Access
- 1 January 2002
- journal article
- Published by Wiley in SID Symposium Digest of Technical Papers
- Vol. 33 (1), 976-979
- https://doi.org/10.1889/1.1830947
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applicationsIEEE Transactions on Electron Devices, 2000
- Nickel induced crystallization of amorphous silicon thin filmsJournal of Applied Physics, 1998
- Characteristics of offset-structure polycrystalline-silicon thin-film transistorsIEEE Electron Device Letters, 1988