New field-effect resonant tunneling transistor: Observation of oscillatory transconductance
- 25 December 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (26), 2742-2744
- https://doi.org/10.1063/1.101940
Abstract
We present device characteristics of a field-effect, unipolar, resonant tunneling transistor. An oscillatory tunneling current in the transfer characteristics is observed for the first time. Our observation confirms a recent hypothesis that a mere three-to-two dimensional resonant tunneling can occur when scattering rate is less than the attempt frequency of tunneling electrons in the quantum well.Keywords
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