AlN/GaN insulated gate heterostructure FET with regrown n+GaN ohmic contact
- 1 January 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (6), 592-593
- https://doi.org/10.1049/el:19980464
Abstract
An AlN/GaN insulated gate heterostructure FET is presented. An n+GaN channel is placed on a thick Al0.15Ga0.85N layer and is covered by a 4 nm thick AlN insulator layer. The FET has a threshold voltage of near 0 V. A Gm of 220 mS/mm for a 1.4 µm gate length was obtained.Keywords
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