Direct determination of the ambipolar diffusion length in GaAs/AlGaAs heterostructures by cathodoluminescence
- 16 October 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (16), 1647-1649
- https://doi.org/10.1063/1.102226
Abstract
A new technique for determining carrier diffusion lengths by cathodoluminescence measurements is presented. The technique is extremely accurate and can be applied to a variety of structures. Ambipolar diffusion lengths are determined for GaAs quantum well material, bulk GaAs, Al0.21Ga0.79As, and Al0.37Ga0.63As. A large increase in the diffusion length is found for Al0.37Ga0.63As and is attributed to an order of magnitude increase in lifetime.Keywords
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