Growth of high-quality GaAs using trimethylgallium and diethylarsine
- 27 April 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (17), 1194-1196
- https://doi.org/10.1063/1.97908
Abstract
In this letter we report the growth of high-quality gallium arsenide using trimethylgallium and diethylarsine. The epitaxial layers had excellent morphology, an n-type background free-carrier concentration as low as 3×1014 cm−3 and a liquid nitrogen temperature mobility as high as 64 600 cm2/V s. The low-temperature (2 K) photoluminescence spectrum has well-resolved excitonic peaks, confirming the high quality of the material.Keywords
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