Effect of Crystal Orientation on the Stacking Fault Formation in Thermally Oxidized Silicon
- 1 December 1971
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (13), 5847-5849
- https://doi.org/10.1063/1.1660020
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Oxidation, defects and vacancy diffusion in siliconPhilosophical Magazine, 1969
- Stacking Faults in Annealed Silicon SurfacesJournal of Applied Physics, 1969
- Stacking faults in steam-oxidized siliconActa Metallurgica, 1966
- EXTRINSIC STACKING FAULTS IN SILICON AFTER HEATING IN WET OXYGENApplied Physics Letters, 1966
- Diffraction contrast analysis of two-dimensional defects present in silicon after annealingPhilosophical Magazine, 1966
- Fault Planes in Steam-Oxidized SiliconJournal of Applied Physics, 1965
- Two-dimensional defects in silicon after annealing in wet oxygenPhilosophical Magazine, 1965
- Growth of Lattice Defects in Silicon during OxidationJournal of Applied Physics, 1964
- Surface Damage and Copper Precipitation in SiliconPhysica Status Solidi (b), 1963