Low-Temperature Solid-State Phase Transformations in 2H Silicon Carbide
Open Access
- 1 April 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (4), 1400-1408
- https://doi.org/10.1063/1.1661332
Abstract
Single crystals of 2HSiC were observed to undergo phase transformations at temperatures as low as 400°C. Some 2H crystals transformed to a structure with one‐dimensional disorder along the crystal c axis. Others transformed to a faulted cubic/6Hstructure. The transformation is time and temperature dependent, and is greatly enhanced by dislocations. Our observations indicate that the transformation takes place by means of a slip process perpendicular to the c axis. Cubic SiC crystals were observed to undergo a solid‐state transformation above 1400°C.Keywords
This publication has 10 references indexed in Scilit:
- Refractive Index, Dispersion, and Birefringence of Silicon Carbide PolytypesApplied Optics, 1971
- Phase transformations, habit changes and crystal growth in SiCJournal of Crystal Growth, 1971
- The discovery of a 2H-3C solid state transformation in silicon carbide single crystalsJournal of Crystal Growth, 1971
- Crystal Growth of 2H Silicon CarbideJournal of Applied Physics, 1969
- Periodic slip processes and the formation of polytypes in zinc sulphide crystalsActa Crystallographica Section A, 1968
- Refinement of the crystal structure of SiC type 6HActa Crystallographica, 1967
- Optical Band Gap and Birefringence of ZnS PolytypesPhysical Review B, 1966
- The optical absorption bands and their anisotropy in the various modifications of SiCSolid State Communications, 1965
- Study of the bands of uniform birefringence in faulted ZnSJournal of Physics and Chemistry of Solids, 1963
- Perfect Crystals of Zinc SulfidePhysical Review B, 1953