A Novel High K Inter-poly Dielectric(IPD), A1/sub 2/O/sub 3/ For Low Voltage/high Speed Flash memories: erasing in msecs at 3.3V
- 1 January 1997
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- ONO Interpoly Dielectric Scaling Limit For Non-volatile Memory DevicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Polyoxide thinning limitation and superior ONO interpoly dielectric for nonvolatile memory devicesIEEE Transactions on Electron Devices, 1991