ONO Interpoly Dielectric Scaling Limit For Non-volatile Memory Devices

Publisher Website

1 January 1993

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 85-86
https://doi.org/10.1109/vlsit.1993.760257

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Bottom-oxide scaling for thin nitride/oxide interpoly dielectric in stacked-gate nonvolatile memory cells
IEEE Transactions on Electron Devices, 1992
Polyoxide thinning limitation and superior ONO interpoly dielectric for nonvolatile memory devices
IEEE Transactions on Electron Devices, 1991

Cited by 10 articles