USE OF CHARACTERISTIC X RAYS TO MONITOR ANNEALING OF ION-IMPLANTED DIAMOND
- 1 May 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (9), 295-297
- https://doi.org/10.1063/1.1652821
Abstract
Bombardment of aligned type‐IIa diamond substrates with 80‐keV protons and simultaneous detection of the resulting characteristic carbon K x rays has revealed excellent channeling structure. This technique has been used to monitor the crystallinity of a surface implanted with P31+ ions. Crystallinity was destroyed by P31+ does of the order of 1014/cm2. Vacuum annealing at 950°C restored the diamond cubic crystal structure.Keywords
This publication has 6 references indexed in Scilit:
- Impurity distribution profiles in ion-implanted siliconCanadian Journal of Physics, 1968
- Charged-particle energy loss in thin gold crystalsCanadian Journal of Physics, 1968
- STATISTICAL RANGE DISTRIBUTION OF IONS IN SINGLE AND MULTIPLE ELEMENT SUBSTRATESApplied Physics Letters, 1966
- Studies in X-Ray Production by Proton Bombardment of C, Mg, Al, Nd, Sm, Gd, Tb, Dy, and HoPhysical Review B, 1965
- Semiconducting Diamonds by Ion BombardmentPhysical Review B, 1965
- Nitrogen, A Major Impurity in Common Type I DiamondPhysical Review B, 1959