Improved flatness in GaAs/AlGaAs heterointerfaces grown by flow-rate modulation epitaxy
- 6 April 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (14), 909-911
- https://doi.org/10.1063/1.98029
Abstract
This letter deals with the atomically flat interfaces at GaAs/AlGaAs heterojunctions grown by a modified metalorganic chemical vapor deposition, flow-rate modulation epitaxy. Single quantum wells show low-temperature photoluminescence with narrower linewidths than those grown by conventional metalorganic chemical vapor deposition. An x-ray diffraction spectrum of (GaAs)2 (AlAs)2 superlattices exhibits no forbidden (003) and (001) diffractions, suggesting that the interfaces are fairly flat.Keywords
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