GaInNAs/GaAs Quantum Well Growth by Chemical Beam Epitaxy
- 1 January 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (1R), 90-91
- https://doi.org/10.1143/jjap.37.90
Abstract
This is the first report on chemical beam epitaxy (CBE) of GaInNAs/GaAs quantum wells (QWs). From the observed clear X-ray diffraction satellite peaks, the QW structure incorporating nitrogen supplied by radical nitrogen was successfully grown. The photoluminescence emission with the emission peak wavelength of 1.0 µm was observed from GaInNAs/GaAs QWs at room temperature. The wavelength could be elongated by increasing the amount of nitrogen and indium.Keywords
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