Growth of single phase GaAs1−xNx with high nitrogen concentration by metal–organic molecular beam epitaxy
- 16 June 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (24), 3242-3244
- https://doi.org/10.1063/1.119137
Abstract
High quality layers of GaAs1−xNx were grown on (001)GaAs by metal–organic molecular beam epitaxy. The growth conditions, and especially the nitrogen to arsenic flux ratio, were carefully explored to assure epitaxial crystal growth. We show well behaved and reproducible growth of single phase GaAs1−xNx with the GaN mole fraction as high as x=0.10. The nitrogen content of epitaxial layers was determined directly by secondary ion mass spectroscopy and high resolution x-ray diffraction.Keywords
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