High-purity InP grown by gas source molecular beam epitaxy (GSMBE)
- 1 October 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 105 (1-4), 97-100
- https://doi.org/10.1016/0022-0248(90)90345-l
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Very high purity InP epilayer grown by metalorganic chemical vapor depositionApplied Physics Letters, 1988
- Growth of ultrapure InP by atmospheric pressure organometallic vapor phase epitaxyApplied Physics Letters, 1986
- Improved molecular beam epitaxial growth of InP using solid sourcesElectronics Letters, 1986
- Very high mobility InP grown by low pressure metalorganic vapor phase epitaxy using solid trimethylindium sourceApplied Physics Letters, 1985
- Growth of ultrapure and Si-doped InP by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1985