Quantitative X-Ray Emission Analysis of Thin Oxide Films on Tantalum
- 1 December 1971
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (13), 5879-5882
- https://doi.org/10.1063/1.1660037
Abstract
A low‐energy (1800‐V) electron beam is used at normal incidence to excite the characteristic x‐ray emission from oxygen in thin oxide films on smooth tantalum substrates. From films having known thickness increments, a calibration procedure is used to relate the oxygen Kα signal/background ratio to oxygen concentrations in the films. Films ranging from less than one monolayer to several hundred Å mean thickness can be measured. At the submonolayer level, oxygen concentrations of about 1×10−9 g cm−2 can be detected on a tantalum surface.Keywords
This publication has 4 references indexed in Scilit:
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