AES and LEED study of the activation of GaAsCsO negative electron affinity surfaces
- 28 February 1975
- journal article
- Published by Elsevier in Surface Science
- Vol. 47 (2), 501-513
- https://doi.org/10.1016/0039-6028(75)90197-1
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Combined Auger electron spectroscopy and scanning electron microscopyJournal of Physics E: Scientific Instruments, 1973
- Adsorption Kinetics of Cs on GaAsJournal of Applied Physics, 1972
- Dependence on Crystalline Face of the Band Bending in Cs2 O-Activated GaAsJournal of Applied Physics, 1971
- A Molecular Beam Cesium Source for Photoemission ExperimentsReview of Scientific Instruments, 1971
- Cesium-Oxygen Activation of Three-Five Compound PhotoemittersJournal of Applied Physics, 1971
- JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATUREApplied Physics Letters, 1970
- Use of Auger Electron Spectroscopy in Determining the Effect of Carbon and Other Surface Contaminants on GaAs–Cs–O PhotocathodesJournal of Applied Physics, 1970
- Photoemission from GaAs-Cs-OJournal of Physics D: Applied Physics, 1968
- Low energy electron diffraction study of the polar {111} surfaces of GaAs and GaSbSurface Science, 1966
- GaAs-Cs: A new type of photoemitterSolid State Communications, 1965