Doping-induced bandwidth enhancement in metal-semiconductor-metal photodetectors
- 1 July 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (7), 657-659
- https://doi.org/10.1109/68.87945
Abstract
A novel technique is demonstrated for enhancing metal-semiconductor-metal photodetector bandwidths without reducing responsivity. The authors have observed bandwidth increases of up to 10 GHz from control to enhanced photodetectors which corresponds to about 70% enhancement. This technique involves modifying the internal electric field structure, by introducing a buried n-type doped layer that is completely depleted, to reduce the relatively long hole transit time.Keywords
This publication has 6 references indexed in Scilit:
- Integrated Optical Receivers Using MSM DetectorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A novel 24-GHz bandwidth coaxial probeIEEE Transactions on Instrumentation and Measurement, 1990
- Deep donor levels (D X centers) in III-V semiconductorsJournal of Applied Physics, 1990
- High-speed metal-semiconductor-metal waveguide photodetector on InPApplied Physics Letters, 1989
- Monolithic integration of a 3-GHz detector/preamplifier using a refractory-gate, ion-implanted MESFET processIEEE Electron Device Letters, 1986
- Properties of alternately charged coplanar parallel strips by conformal mappingsIEEE Transactions on Electron Devices, 1968