High-speed metal-semiconductor-metal waveguide photodetector on InP
- 20 November 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (21), 2173-2175
- https://doi.org/10.1063/1.102073
Abstract
We demonstrate high-speed performance of InGaAs barrier-enhanced metal-semiconductor-metal (M-S-M) Schottky barrier photodetectors monolithically integrated with double-heterostructure InP/InGaAsP/InP waveguides. Pulse response widths of 77 ps are recorded, with an associated 3 dB power bandwidth of 1.7 GHz. Photodetectors acting as both ‘‘taps’’ of the waveguided signal and as ‘‘terminal’’ devices were fabricated. These detectors have application in receivers which are integrated with semiconductor waveguides for on-chip optical signal processing.Keywords
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