THIN-OXIDE MOS CAPACITANCE STUDIES OF FAST SURFACE STATES
- 1 September 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (5), 211-213
- https://doi.org/10.1063/1.1653369
Abstract
Fast surface states at the silicon‐silicon dioxide interface have been studied using the MOS capacitor structure with a very thin oxide (50–100 Å), which greatly enhances the effect of the surface states on the capacitance‐voltage characteristics. On p‐type silicon, a surface‐state distribution with a peak at 0.3 eV above the valence band is observed. Comparison of the experimental results with theoretical calculations based on the equivalent circuit model is made. Total density of state of 5.4×1012/cm2 with a peak of 3×1013 surface states/cm2 eV are observed.Keywords
This publication has 10 references indexed in Scilit:
- Exact analytical solution of high frequency lossless MOS capacitance-voltage characteristics and validity of charge analysisSolid-State Electronics, 1969
- Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si StructuresJournal of the Electrochemical Society, 1969
- The silicon-silicon dioxide systemProceedings of the IEEE, 1969
- Low-temperature hysteresis effects in metal-oxide-silicon capacitors caused by surface-state trappingIEEE Transactions on Electron Devices, 1968
- Si-SiO[sub 2] Fast Interface State MeasurementsJournal of the Electrochemical Society, 1968
- Effective mass and intrinsic concentration in siliconSolid-State Electronics, 1967
- A Floating Gate and Its Application to Memory DevicesBell System Technical Journal, 1967
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965