Growth and properties of TiN and TiOxNy diffusion barriers in silicon on sapphire integrated circuits
- 1 October 1987
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 153 (1-3), 287-301
- https://doi.org/10.1016/0040-6090(87)90190-8
Abstract
No abstract availableKeywords
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