Implantation of 14N+ into Monocrystalline GaN films
- 31 January 1975
- journal article
- research article
- Published by Elsevier in The International Journal of Applied Radiation and Isotopes
- Vol. 26 (1), 33-IN4
- https://doi.org/10.1016/0020-708x(75)90009-5
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- FORWARD CURRENT-VOLTAGE CHARACTERISTICS AND DIFFERENTIAL RESISTANCE PEAK OF A SCHOTTKY BARRIER DIODE ON HEAVILY DOPED SILICONApplied Physics Letters, 1969
- On the possibility of superconduction in GaNPhysics Letters, 1964