Reordering of Reconstructed Si Surfaces upon Ge Deposition at Room Temperature
- 16 July 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 53 (3), 294-297
- https://doi.org/10.1103/physrevlett.53.294
Abstract
The behavior of the Si(111)-(7 × 7) and the Si(100)-(2 × 1) surfaces upon room-temperature deposition of Ge is investigated with Auger-electron spectroscopy, low-energy electron diffraction, and Rutherford backscattering channeling techniques. The Ge over-layers form a sharp, but highly disordered, interface with no indication of island formation. It is found that the Ge relieves the reconstruction of the Si(100)-(2 × 1) surface but not of the Si(111)-(7 × 7) surface.Keywords
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