Temperature control of electromigration to form gold nanogap junctions
- 19 December 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (26), 263101
- https://doi.org/10.1063/1.2149174
Abstract
Controlled electromigration of gold nanowires of different cross-sectional areas to form nanogap junctions is studied using a feedback method. A linear correlation between the cross-sectional area of the gold nanowires and the power dissipated in the junction during electromigration is observed, indicating that the feedback mechanism operates primarily by controlling the temperature of the junction during electromigration. We also show that the role of the external feedback circuit is to prevent thermal runaway; minimization of series resistance allows controlled electromigration to a significant range of junction resistances with a simple voltage ramp.Keywords
This publication has 9 references indexed in Scilit:
- Kondo Effect in Electromigrated Gold Break JunctionsNano Letters, 2005
- Controlled fabrication of nanogaps in ambient environment for molecular electronicsApplied Physics Letters, 2005
- Fabrication and characterization of sub-3 nm gaps for single-cluster and single-molecule experimentsNanotechnology, 2003
- 3ω method for specific heat and thermal conductivity measurementsReview of Scientific Instruments, 2001
- Nanomechanical oscillations in a single-C60 transistorNature, 2000
- Fabrication of metallic electrodes with nanometer separation by electromigrationApplied Physics Letters, 1999
- Electromigration in thin film conductorsSemiconductor Science and Technology, 1997
- Failure mechanism models for electromigrationIEEE Transactions on Reliability, 1994
- Electromigration failure modes in aluminum metallization for semiconductor devicesProceedings of the IEEE, 1969