Concept of rewritable organic ferroelectric random access memory in two lateral transistors-in-one cell architecture
- 15 January 2014
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Voltage-readable nonvolatile memory cell with programmable ferroelectric multistates in organic inverter configurationOrganic Electronics, 2013
- Solution-processed low leakage organic field-effect transistors with self-pattern registration based on patterned dielectric barrierOrganic Electronics, 2012
- Organic inkjet-patterned memory array based on ferroelectric field-effect transistorsOrganic Electronics, 2011
- Surface modification of a ferroelectric polymer insulator for low-voltage readable nonvolatile memory in an organic field-effect transistorJournal of Applied Physics, 2011
- Complementary transfer-assisted patterning of high-resolution heterogeneous elements on plastic substrates for flexible electronicsOrganic Electronics, 2010
- Organic Nonvolatile Memory Devices Based on FerroelectricityAdvanced Materials, 2010
- Printed Nonvolatile Memory for a Sheet-Type Communication SystemIEEE Transactions on Electron Devices, 2009
- Organic thin film transistors with polymer high-k dielectric insulatorMaterials Science and Engineering: C, 2006
- High-performance solution-processed polymer ferroelectric field-effect transistorsNature Materials, 2005
- Suppression of ferroelectric polarization by an adjustable depolarization fieldApplied Physics Letters, 1997