IMAGING AND STORAGE WITH A UNIFORM MOS STRUCTURE
- 1 December 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 11 (11), 359-361
- https://doi.org/10.1063/1.1755014
Abstract
Radiation sensitive characteristics of a uniform InSb—metal‐oxide‐semiconductor (MOS) structure have been used to detect images. By rapid optical scanning this structure with visible light of 0.63 μ we have detected infrared images due to 5‐μ radiation. In addition information can be read‐in and stored (or ``photographed'') by using 1‐μ radiation, nondestructively read‐out with 5‐μ radiation, and erased with 0.25‐μ radiation.Keywords
This publication has 3 references indexed in Scilit:
- InSb MOS INFRARED DETECTORApplied Physics Letters, 1967
- Photocontrolled Surface Conductance in Anodized InSbJournal of Applied Physics, 1964
- Surface conductance on p-type InSb at 77°KJournal of Physics and Chemistry of Solids, 1962