Integrated external cavity quantum well laser array using single epitaxial growth on a patterned substrate
- 29 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (5), 429-431
- https://doi.org/10.1063/1.102779
Abstract
We report the monolithic integration of a quantum well laser array and a transparent waveguide with higher band-gap material using a single step of molecular beam epitaxy on a patterned, nonplanar substrate. The substrate has a periodically corrugated patterned section longitudinally adjacent to an unpatterned, planar section. The laser heterostructure on the corrugated section of the substrate has a thicker quantum well and, thus, lower effective band gap than that of the one grown on the planar section. Hence, a waveguide transparent at the laser array emission wavelength is formed on the planar section. We demonstrate phase locking of the otherwise uncoupled laser array using diffraction coupling through the transparent waveguide section. Emission wavelength tuning of ∼80 Å is also obtained using carrier injection into the waveguide section.Keywords
This publication has 8 references indexed in Scilit:
- Integrated external cavity GaAs/AlGaAs lasers using selective quantum well disorderingApplied Physics Letters, 1989
- Stimulated emission in semiconductor quantum wire heterostructuresPhysical Review Letters, 1989
- Patterned quantum well semiconductor laser arraysApplied Physics Letters, 1989
- Patterned quantum well semiconductor injection laser grown by molecular beam epitaxyApplied Physics Letters, 1988
- Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substratesApplied Physics Letters, 1987
- Integrated external cavity laserApplied Physics Letters, 1986
- Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark EffectPhysical Review Letters, 1984
- Diffraction coupled phase-locked semiconductor laser arrayApplied Physics Letters, 1983