Photovoltaic properties of p-n junctions in CuInS2
- 1 July 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (7), 5045-5046
- https://doi.org/10.1063/1.325604
Abstract
p‐n junctions have been formed in CuInS2 by diffusing an n layer into p‐type bulk material. When tested as photovoltaic detectors, typical diodes exhibit a maximum quantum efficiency of ∼15% near 0.8 μm.Keywords
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