Stable cw operation at room temperature of a 1.5-μm wavelength multiple quantum well laser on a Si substrate
- 27 January 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (4), 472-473
- https://doi.org/10.1063/1.106638
Abstract
Room-temperature cw operation of an InGaAs/InGaAsP multiple quantum well (MQW) laser diode on a Si substrate is reported. The MQW laser emits at a 1.54 μm wavelength and exhibits no degradation after over 2000 h of operation. Employing a hybrid organometallic vapor phase epitaxy/vapor mixing epitaxy method and a layer structure for improving crystalline quality, high-quality MQW layers are obtained. A stable longitudinal mode spectrum demonstrates the effectiveness of the MQW active layer.Keywords
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