Two-dimensional hole gas at a semiconductor heterojunction interface
- 15 April 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (8), 685-687
- https://doi.org/10.1063/1.91624
Abstract
We report the first observation of a two‐dimensional hole gas (2DHG) at a semiconductor heterojunction interface (GaAs/AlxGa1−xAs). Low‐temperature angular‐dependent Shubnikov‐de Haas measurements demonstrate the two dimensionality of the system and yield a carrier surface density of 7×1011 cm−2. From the temperature dependence of the magneto oscillations we derive an effective mass of 0.35±0.1m0 for the carriers. Hall measurements establish a He temperature mobility of μ≈1700 cm2/V sec.Keywords
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