Transitions to confined states of the split-off band in GaAs-(Al,Ga)As multiple-quantum-well heterostructures

Abstract
By studying the low-temperature photoluminescence excitation spectra from a number of GaAs-(Al,Ga)As multiple-quantum-well heterostructures with various well widths and Al fractions we provide the most conclusive evidence yet published for the observation of optical absorption from a confined hole state in the split-off band of GaAs to the lowest confined electron subband.