Unambiguous observation of thestate of the light- and heavy-hole excitons in GaAs-(AlGa) As multiple-quantum-well structures
- 15 October 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (8), 6007-6010
- https://doi.org/10.1103/physrevb.34.6007
Abstract
Discrete peaks are seen in the photoluminescence excitation spectra of GaAs-(AlGa)As multiple-quantum-well samples which we identify as the excited state of the heavy- and light-hole excitons. The splitting of the excitons is accurately determined and combined with calculations of the heavy-hole exciton binding energy to give an accurate determination of the binding energy of the ground state.
Keywords
This publication has 8 references indexed in Scilit:
- Reappraisal of the band-edge discontinuities at theAs-GaAs heterojunctionPhysical Review B, 1985
- Optical properties in modulation-doped GaAs-As quantum wellsPhysical Review B, 1985
- Size quantization and band-offset determination in GaAs-GaAlAs separate confinement heterostructuresPhysical Review B, 1985
- Energy levels of Wannier excitons in quantum-well structuresPhysical Review B, 1984
- Wannier exciton in quantum wellsPhysical Review B, 1983
- Theoretical investigations of superlattice band structure in the envelope-function approximationPhysical Review B, 1982
- Observation of the excited level of excitons in GaAs quantum wellsPhysical Review B, 1981
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957