New model of conduction mechanism in semi-insulating GaAs
- 1 January 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (1), 349-351
- https://doi.org/10.1063/1.325668
Abstract
Variations versus temperature of the electrical properties (conductivity, Hall and drift mobilities) in semi‐insulating GaAs are explained by a model which accounts for the spatial fluctuation of impurity densities. A discussion of this model is also presented.Keywords
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