A study of deep impurity levels in GaAs due to Cr and O by ac photoconductivity
- 1 November 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (11), 4583-4586
- https://doi.org/10.1063/1.323515
Abstract
Ac photoconductivity measurements at T?20 K allow accurate determination of the energy levels of GaAs : O at Ec 753 meV and of GaAs : Cr at Ec−838 meV. O gives a clearly defined sharp threshold, while Cr shows a peak at 860–870 meV of varying width. These levels have been observed in boat‐grown and in n‐ and p‐type LPE material. Oscillatory photoconductivity is observed in conjunction with the O level.Keywords
This publication has 9 references indexed in Scilit:
- Photoluminescence from deep centers in GaAsSolid State Communications, 1976
- Photoluminescence of the Cr accepotr in boat-grown and LPE GaAsJournal of Applied Physics, 1976
- Photoelectronic properties of high-resistivity GaAs : CrJournal of Applied Physics, 1976
- Photoelectronic properties of high-resistivity GaAs : OJournal of Applied Physics, 1976
- A study of deep levels in GaAs by capacitance spectroscopyJournal of Electronic Materials, 1975
- Spectral distribution of photoionization cross sections by photoconductivity measurementsJournal of Applied Physics, 1975
- Probable observation of unusual local vibrational modes in the oscillatory photoconductivity of semi-insulating GaAsSolid State Communications, 1975
- Electron-Capture ("Internal") Luminescence from the Oxygen Donor in Gallium PhosphidePhysical Review B, 1968
- Luminescence of GaAs Grown in OxygenJournal of Applied Physics, 1963