Nanomachining of mesoscopic electronic devices using an atomic force microscope
- 23 August 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (8), 1107-1109
- https://doi.org/10.1063/1.124611
Abstract
An atomic force microscope (AFM) is used to locally deplete the two-dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure. The depletion is induced by repeated mechanical scribing of the surface layers of the heterostructure using the AFM tip. Measuring the room-temperature resistance across the scribed lines during fabrication provides in situ control of the depletion of the 2DEG. Variation of the room-temperature resistance of such lines tunes their low-temperature characteristics from tunneling up to insulating behavior. Using this technique, an in-plane-gate transistor and a single-electron transistor were fabricated.Keywords
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