Pressure and composition dependence of high field instabilities in In As1−xPx alloys
- 31 January 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (1), 83-90
- https://doi.org/10.1016/0038-1101(78)90119-3
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Sub-threshold velocity-field characteristics of InAs1-xPx alloysPhysica Status Solidi (a), 1977
- 3-level conduction-band structure of GaAs from high-stress and high-field measurementsElectronics Letters, 1977
- A simple method for estimating peak electron velocities in polar semiconductorsJournal of Physics C: Solid State Physics, 1976
- High-field transport in indium phosphideJournal of Physics C: Solid State Physics, 1976
- Ordering and Absolute Energies of theandConduction Band Minima in GaAsPhysical Review Letters, 1976
- Electron-phonon interaction and inter-valley scattering in semiconductorsJournal of Physics C: Solid State Physics, 1973
- Electron Transport in InSb, InAs, and InPPhysical Review B, 1971
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970
- Infrared Spectral Emittance of InAsPhysical Review B, 1965
- Electron mobility of indium arsenide phosphide [In(AsyP1−y)]Journal of Physics and Chemistry of Solids, 1959