The reaction between a TiNi shape memory thin film and silicon
- 1 July 1997
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 12 (7), 1734-1740
- https://doi.org/10.1557/jmr.1997.0239
Abstract
The reaction between shape-memory TiNi thin films and silicon has been characterized by conventional, analytical, and high-resolution transmission electron microscopy. A reaction layer is formed during the 525 °C post-deposition crystallization anneal of the sputter-deposited TiNi, and consists of several phases: Ti2Ni, a nickel silicide, and a ternary titanium nickel silicide. The mechanism for the interlayer formation is discussed.Keywords
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