Screening and elementary excitations in narrow-channel semiconductor microstructures
- 15 July 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (2), 1401-1404
- https://doi.org/10.1103/physrevb.32.1401
Abstract
The dielectric response of a one-dimensional electron gas occurring in the narrow inversion layers in metal-oxide-semiconductor field-effect transistor (or quantum-well) structures is investigated theoretically. A nonsingular screening function appropriate for dc transport calculations is derived. The plasma frequency in such a system is obtained as an explicit function of wave number. Plasmon dispersion for a lateral two-dimensional superlattice made from such one-dimensional quantum wires is also calculated.Keywords
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