One-Dimensional Localization and Interaction Effects in Narrow (0.1-μm) Silicon Inversion Layers
- 27 September 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 49 (13), 951-955
- https://doi.org/10.1103/physrevlett.49.951
Abstract
The conductance of narrow (0.1-μm) silicon inversion layers has been measured at low temperatures. A divergent, nonmetallic decrease of conductance is observed below 30 K, in excellent quantitative agreement with the combined theories of weak localization and interaction effects in their one-dimensional form, if one assumes parameters comparable to those observed in wide (two-dimensional) inversion layers. In this novel experimental system both localization and interaction effects are present and comparable in size.Keywords
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