Selective area solution growth of Ge and GaAs on Si
- 1 July 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (1), 210-214
- https://doi.org/10.1063/1.343907
Abstract
Ge and GaAs have been grown on Si substrates by selective area solution growth from saturated metal solutions. Prior to this work, the growth of GaAs on Si has been almost exclusively done by molecular-beam epitaxy or metalorganic chemical vapor deposition. A primary advantage of the solution growth process is the prospect for selective area growth where growth is limited solely to openings in a SiO2 mask. The selectively grown Ge and GaAs crystal compositions were determined by energy dispersive analysis by x ray with the GaAs material demonstrating stoichiometry without detectable Si or Ge incorporation. The GaAs crystals on Si were also fabricated into simple light-emitting diode structures that emitted infrared light at 0.7–0.8 V forward bias.Keywords
This publication has 12 references indexed in Scilit:
- Selective liquid phase epitaxy and defect reduction in GaAs grown on GaAs-coated silicon by molecular beam epitaxyApplied Physics Letters, 1987
- Structural properties of GaAs on (001) oriented Si and Ge substratesJournal of Applied Physics, 1987
- Material properties of high-quality GaAs epitaxial layers grown on Si substratesJournal of Applied Physics, 1986
- Thin-film silicon crystal growth on low cost substratesJournal of Crystal Growth, 1984
- Metal-semiconductor field-effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxyApplied Physics Letters, 1984
- Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowthApplied Physics Letters, 1982
- Liquid phase epitaxial deposition of GaP on GaAsJournal of Crystal Growth, 1978
- The Epitaxial Growth of Ge on Si by Solution Growth TechniquesJournal of the Electrochemical Society, 1966
- A Novel Crystal Growth Phenomenon: Single Crystal GaAs Overgrowth onto Silicon DioxideJournal of the Electrochemical Society, 1965
- The growth of semiconductor crystals from solution using the twin-plane reentrant-edge mechanismJournal of Physics and Chemistry of Solids, 1964