Photoluminescence linewidth systematics for semiconductor quantum well structures with graded interface composition profile
- 15 January 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (2), 578-580
- https://doi.org/10.1063/1.340092
Abstract
Photoluminescence linewidth systematics for the case of semiconductor quantum well structures with a graded interface composition profile are studied within a model which attributes the linewidth to alloy disorder and alloy composition fluctuation effects. Results are presented for two specific types of gradations derived from consideration of typical experimental situations, and comparison is made with the available experimental data.Keywords
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